A Low Actuation Voltage Capacitive RF MEMS Switch
A low actuation voltage capacitive RF MEMS switch is demonstrated in this paper. Compared with ordinary bending deflection RF MEMS switch, this switch has folded suspending beams and torsion springs, which can make the actuation voltage of the RF MEMS capacitive switches depressed obviously. The simulation results show that the actuation voltage can be affected by the t1 (the thickness of the top membrane), t0 (the thickness of the Si3N4 layer) and g0 (the initial height between the top membrane and dielectric). Additionally, the holes on the membrane can affect the property of the switch, such as the actuation voltage, the insertion loss and the isolation. Finally, a length 300um, width 120um RF MEMS switch with 5um×5um holes on the 60um×120um membrane is designed and simulated. The simulation results show that the actuation voltage of RF MEMS switch is about 4V with t1=0.8 um, t0=0.3 um and g0=2 um, the resonant frequency is as high as 104Hz.
RF MEMS capacitive switch actuation voltage simulation
Mingxin song Jinghua Yin Liang Song
School of Applied Sciences, Harbin University of Science and Technology, China
国际会议
第八届国际测试技术研讨会(8th International Symposium on Test and Measurement)
重庆
英文
1831-1834
2009-08-01（万方平台首次上网日期，不代表论文的发表时间）