Design and Fabrication of GaAs/AlGaAs HEMT-Embedded Accelerometer

摘要：

In this paper, we designed a novel micro accelerometer based on GaAs/AlGaAs high electron mobility transistor (HEMT). The structure of accelerometer contains four suspended flexural beams and a central proof mass configuration.And the HEMT have been integrated on the beams as sensing elements to detect the external strain.The finite element analysis is used to stimulate the function of sensor. At last, the GaAs/AlGaAs HEMT were designed and the cantilever structure has been processed successfully by control hole technique. Good drain–source curves ID versus VDS for the on-cantilever HEMT indicates the promise for mechanical sensors applications.

关键词： GaAs/AlGaAs HEMT MEMS

作者: LIU Guowen XUE Chenyang HOU Tingting TAN Zhenxin LIU Jun

作者单位: Key Laboratory of Instrumentation Science & Dynamic Measurement (North University of China), Ministry of EducationDepartment of Electronic Science and technology, North university of China, Taiyuan, Shanxi, China, 030051

会议类型: 国际会议

会议名称: 第八届国际测试技术研讨会(8th International Symposium on Test and Measurement)

会议地点: 重庆

会议语种:英文

页码: 1843-1846

在线出版日期: 2009-08-01（万方平台首次上网日期，不代表论文的发表时间）