Study on the structure and characteristics of a novel GaAs pseudomorphic high electron mobility (p-HEMT)
The conceptual design of the pseudomorphic high electron mobility (p-HEMT) structure is based on 2D electron gas transport and, therefore, a HEMT is expected to manifest quantization at any point along the channel. Compared with MOSFET, the output current of p-HEMT is higher obviously.In the current study, a novel structure of GaAs P-HEMT is designed for better control of quantization. Especially it uses dual-cavity grating groove. We test the current-voltage(I-V) characteristics and transfer characteristics of p-HEMT, and contrast results of different grating groove depths. Larger saturation currents are observed with shallow grating groove depth. We tend to believe that this novel structure is responsible for the microwave applications.
p-HEMT GaAs structure grating groove
Tingting Hou Chenyang Xue Guowen Liu Jing Cui
Key Laboratory of Instrumentation Science & Dynamic Measurement (North University of China), Ministry of Education Department of Electronic Science and technology, North university of China, Taiyuan, Shanxi, China, 030051
国际会议
第八届国际测试技术研讨会(8th International Symposium on Test and Measurement)
重庆
英文
1855-1858
2009-08-01（万方平台首次上网日期，不代表论文的发表时间）