810 nm wavelength high power Free-Al diode array module
Semiconductor laser has an important role in the development of national economy and military fields because of its small capacity, light weight, high efficiency and long lifetime. 810 nm high power semiconductor lasers are ideal light pump sources for Nd:YAG. Development of high-power semiconductor laser arrays will broaden the application of the semiconductor lasers in industry, medical treatment and displaying. InGaAs ／ InGaAsP strained—compensated single-quantum well structure with an emission-wavelength of 810 nm was grown．The back HR coating was Al2O3 ／5(HfO2 ／ SiO2 ) ／HfO2 and the front AR coating was Al2O3. A novel water-cooler and a new structured heat-sink developed by ourselves performed efficiently.As a result, it reached the leading level domestically. The highest electricity-optics convert efficiency was up to 41.3 ％．The CW output power of the module reached to 46.2 W at a current of 50 A．The slope efficiency was 1.15W/A and the central wavelength was 810 nm with a FWHM of 3 nm．
high power semiconductor laser array quantum well array module HR coating AR coating
QU Zhou LI Qiushi LIU Bo ZHANG Hongtao ZHAI Xuhua
Control Department, Armor Technique Insititute of P.L.A,Changchun,China, 130117 Oral Implant Center, Stomatology of Jilin University,Changchun,China, 130041 School of Mechatronic Engineering of Changchun Institute of Technology, Changchun, China, 130012
国际会议
第八届国际测试技术研讨会(8th International Symposium on Test and Measurement)
重庆
英文
3065-3068
2009-08-01（万方平台首次上网日期，不代表论文的发表时间）