Trench IGBT with Carrier Bypass Region

摘要：

A new Trench IGBT with carrier bypass region is proposed in paper. In this new structure, P+ bypass regions are introduced, which provided hole carrier bypass, reduced the parasitic thyristor effect in the Trench IGBT, allowed higher safe operating area. The results are shown that the temperature characteristic of the new Trench IGBT is better than that of the conventional Trench IGBT. The metal which contacts the bypass regions and the emitters helps the thermal dissipation at high temperature and reduces the emitter contact resistance.

作者: Zehong Li Mengliang Qian Rongyao Ma Bo Zhang Zhaoji Li

作者单位: University of Electronic Science and Technology of China

会议类型: 国际会议

会议名称: 2009国际通信电路与系统学术会议(ICCCAS 2009)(2009 International Conference on Communications，Circuits and Systems)

会议地点: 成都

会议语种:英文

页码: 624-627

在线出版日期: 2009-07-23（万方平台首次上网日期，不代表论文的发表时间）