New Lateral IGBT with Controlled Anode on SOI Substrate for PDP Scan Driver IC
A new Lateral Insulated-Gate Bipolar Transistor (LIGBT) structure on SOI substrate, called Controlled Anode LIGBT (CA-LIGBT), is proposed. The design of the new structure results in high breakdown voltage and good trade off between turn-off time and on-state voltage drop. Simulation results show that the CA-LIGBT has about 85.0％ reduction in turn-off time and about 20.0％ increase in on-state voltage drop, as compared to the conventional LIGBT. The breakdown voltage is above 200V. The proposed SOI CA-LIGBT can be fabricated by the conventional trench SOI power ICs process steps, and it is useful for PDP scan driver IC.
Wensuo Chen Gang Xie Bo Zhang Zehong Li Mei Zhao Zhaoji Li
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic science and Technology of China, Chengdu, China
国际会议
2009国际通信电路与系统学术会议(ICCCAS 2009)(2009 International Conference on Communications，Circuits and Systems)
成都
英文
628-630
2009-07-23（万方平台首次上网日期，不代表论文的发表时间）