Deep Trench SOI LIGBT with Enhanced Safe Operating Area
A novel deep trench SOI LIGBT with enhanced safe operating area has been proposed. Deep trench gate electrode, reaching buried oxide layer, has been directly introduced for achieving low on-resistance. Heavily doped p+ region at the emitter side, which sandwiches between the n-drift region and n+ emitter region, is provided as holes bypassing path for ensuring enhanced forward biased safe operating area. Some of holes will flow from the n-drift to the p+ emitter without flowing through the pwell layer directly. On the other hand, the portion of the n-drift region which underlies the pwell is fully depleted at a relatively low voltage, thus preventing the voltage across the trench gate oxide from becoming too high and causing less reliable and stable problems. This JFET pinch-off effect keeps any hot-carrier injection (HCI) away from the sensitive gate oxide, providing HCI performance far superior to conventional LIGBT devices.
Ming Qiao Bo Luo Yuanyuan Zhao Mei Zhao Bo Zhang Zhaoji Li
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
国际会议
2009国际通信电路与系统学术会议(ICCCAS 2009)(2009 International Conference on Communications，Circuits and Systems)
成都
英文
631-634
2009-07-23（万方平台首次上网日期，不代表论文的发表时间）