Effect of Floating Island Thickness and Doping Concentration in Power FLIMOS: 2-D Simulation Study

摘要：

Device simulations are applied to find out the effects of floating island thickness (dF) and doping concentration (Np+) in power floating island MOSFET (FLIMOS). The simulation results show that the specific on-resistance (Ron·sp) increases by enlarging dF while Np+ produce little influence on Ron·sp; When Np+ is low, the breakdown voltage (Vbr) improves by enlarging dF; When Np+ is high, the breakdown voltage (Vbr) degrades by enlarging dF.

作者: Hong Ye Ming Qiao Wei Su Bo Zhang

作者单位: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Scien State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Scien Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, China, 621900

会议类型: 国际会议

会议名称: 2009国际通信电路与系统学术会议(ICCCAS 2009)(2009 International Conference on Communications，Circuits and Systems)

会议地点: 成都

会议语种:英文

页码: 635-637

在线出版日期: 2009-07-23（万方平台首次上网日期，不代表论文的发表时间）