A Novel Double RESURF LDMOS with optimized ESD Robustness

摘要：

In this paper, a Double RESURF LDMOS with optimized ESD robustness is proposed. By implanting P+ at the drain region, an additional discharge path through a vertical PNP is formed. The current density at the source side is reduced, thus it restrains the triggering of the parasitic lateral NPN. The discharge limits under ESD stress of this structure is altered from the triggering of the parasitic lateral NPN to the second breakdown of the parasitic vertical PNP. Contrast to the conventional structure, the discharge ability of the novel device increases form 1.57×10-5 Aμm-1 to 3.13×10-5 Aμm-1.

作者: Lingli Jiang Ming Qiao Zhaoji Li Bo Zhang

作者单位: University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China

会议类型: 国际会议

会议名称: 2009国际通信电路与系统学术会议(ICCCAS 2009)(2009 International Conference on Communications，Circuits and Systems)

会议地点: 成都

会议语种:英文

页码: 638-640

在线出版日期: 2009-07-23（万方平台首次上网日期，不代表论文的发表时间）