Effects of a Multi-Recessed gate in Microwave 4H-SiC Power MESFETs

摘要：

Multi-recessed gate 4H-SiC MESFETs with a gate periphery of 5-mm are fabricated and characterized. The multi-recessed region under the gate terminal are applied to improve the gate-drain breakdown voltage and to alleviate the trapping induced instabilities by moving the current path away from the surface of the device. The experimental results demonstrate that microwave output power density, power gain and power-added efficiency (PAE) for a multi-finger 5-mm gate periphery SiC MESFETs with multi-recessed gate structure are about 29％, 1.1dB and 7％ higher than those of the conventional devices fabricated in this work using the same process.

作者: Xiao Chuan Deng Zhen Feng Bo Zhang Zhao Ji Li Liang Li

作者单位: State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Scien National Key Laboratory of ASIC, Shijiazhuang 050051, PR China

会议类型: 国际会议

会议名称: 2009国际通信电路与系统学术会议(ICCCAS 2009)(2009 International Conference on Communications，Circuits and Systems)

会议地点: 成都

会议语种:英文

页码: 645-647

在线出版日期: 2009-07-23（万方平台首次上网日期，不代表论文的发表时间）