High Voltage Gate Drive IC with a Novel NFFP HVI Structure

摘要：

A novel NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V half bridge gate drive IC with the NFFP HVI structure is experimentally realized by using a thin epitaxial high voltage BCD process. Compared with the conventional MFFP HVI structure, the proposed NFFP HVI structure shows simpler process and lower cost. The experimental high side offset voltage of the half bridge gate drive IC with the NFFP HVI structure is almost as same as that with the self-shielding structure.

作者: Zhuo Wang Meng Wang Ming Qiao Bo Zhang

作者单位: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

会议类型: 国际会议

会议名称: 2009国际通信电路与系统学术会议(ICCCAS 2009)(2009 International Conference on Communications，Circuits and Systems)

会议地点: 成都

会议语种:英文

页码: 648-651

在线出版日期: 2009-07-23（万方平台首次上网日期，不代表论文的发表时间）