A High-Order Curvature-Compensated CMOS Bandgap Reference

摘要：

This paper describes a high precision 3rd-order curvature-compensated bandgap reference compatible with a standard 0.5-μm CMOS process. Utilizing the voltage to current converter and the voltage current characteristic of base-emitter junction to realize VTln(T) compensation, the proposed bandgap reference can implement high-order compensation. A temperature coefficient (TC) of 2.5 ppm/℃ is realized with temperature ranging from -33℃ to 167℃ at 3.6V power supply, and a power supply rejection ratio (PSRR) of 77 dB is achieved. The variation in the output voltage of the bandgap voltage reference is 0.24mV when the power supply varies from 2.7V to 5V.

作者: Ze-Kun Zhou Xin Ming Bo Zhang Zhao-Ji Li

作者单位: State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China

会议类型: 国际会议

会议名称: 2009国际通信电路与系统学术会议(ICCCAS 2009)(2009 International Conference on Communications，Circuits and Systems)

会议地点: 成都

会议语种:英文

页码: 652-656

在线出版日期: 2009-07-23（万方平台首次上网日期，不代表论文的发表时间）