Design of a 2.2 GHz High Efficiency GaN HEMT Inverse Class E Transmission-Line Power Amplifier

摘要：

This paper reports on the design and measurements of an inverse class E transmission-line power amplifier using a newly fabricated GaN HEMT device, NTPB0025. This amplifier was designed according to the inverse class E lumped prototype using load-pull optimizations. After that, the lumped amplifier was transformed to a transmission-line realization. The drain efficiency of 64％, PAE of 57.7％, and the output power of 41.5 dBm were measured at 2.2 GHz.

作者: Jin He Dehao Ren

作者单位: Chengdu University of Information Technology Chengdu, Sichuan, China

会议类型: 国际会议

会议名称: 2009国际通信电路与系统学术会议(ICCCAS 2009)(2009 International Conference on Communications，Circuits and Systems)

会议地点: 成都

会议语种:英文

页码: 746-748

在线出版日期: 2009-07-23（万方平台首次上网日期，不代表论文的发表时间）