Influence of the Al mole Fraction on Microwave Noise Performance of AlzGa1-zN/GaN HEMTs

摘要：

To reveal the influence of Al mole fraction on the microwave noise performance of AlxGa1-xN/GaN HEMTs, numerical analysis is performed on the intrinsic noise by reducing its value from 35％ to 25％ and 15％ in this paper. A model based on measurement results is used and simulations are carried out by commercial TCAD soft Silvaco Atlas. The I-V curves and both of the gate and drain noise spectral density are calculated and compared at different bias. The results show that the reduction of the Al mole fraction degrades the intrinsic microwave noise behavior of HEMT’s only at high bias currents due to the poor carrier confinement. The AlGaN/GaN HEMTs with 25 ％ Al content has the best minimum noise figure (Fmin) at low bias currents due to the reduction of gate noise, and it has the same Fmin with 35％ at a few higher bias current.

作者: Yuehang Xu Yunchuan Guo Yunqiu Wu Ruimin Xu Bo Yan

作者单位: Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China (UESTC), Chengdu, P.R.China

会议类型: 国际会议

会议名称: 2009国际通信电路与系统学术会议(ICCCAS 2009)(2009 International Conference on Communications，Circuits and Systems)

会议地点: 成都

会议语种:英文

页码: 759-761

在线出版日期: 2009-07-23（万方平台首次上网日期，不代表论文的发表时间）