A Novel Current Reuse Wideband Amplifier using 130 nm Si CMOS Technology for 22-29 GHz Applications
In this paper, a novel wideband amplifier is proposed for 22 - 29 GHz UWB applications in 0.13 um Si CMOS technology. In order to reduce the dc current of the amplifier, a novel current reuse technique is adopted in a cascode CMOS transistor. In addition, a low-pass type feedback circuit for the first stage and an inductive feedback circuit for the second stage are designed to make the bandwidth wider. It is expected that the wideband amplifier exhibits a gain of 11.3 dB +/- 1.2 dB with a dc power consumption as low as 9.8 mW.
Q.Liu J.Sun Suh.Y.J S.Kurachi N.Itoh T.Yoshimasu
Graduate school of Information, Production and Systems, Waseda University Kitakyushu 808-0135, Japan Semiconductor Company, Toshiba Corporation Yokohama 247-8585, Japan
国际会议
2009国际通信电路与系统学术会议(ICCCAS 2009)(2009 International Conference on Communications，Circuits and Systems)
成都
英文
807-809
2009-07-23（万方平台首次上网日期，不代表论文的发表时间）