A 3D RRAM Using Stackable 1TXR Memory Cell for High Density Application

摘要：

This paper reports a novel 3D RRAM concept using stackable multi-layer 1TXR memory cell structure for future high density application. Using an 8-layer metal of stacked 1TXR (X=64) as an example, the density is over 260％ higher than that of the conventional single layer 1T1R structure. Corresponding operation algorithm is put forward for the first time, which can inhibit mis-write and mis-read caused by sneaking current and reduce power consumption.

作者: Ji Zhang Yiqing Ding Xiaoyong Xue Gangjin Yuxin Wu Yufeng Xie Yinyin Lin

作者单位: ASIC&System State Key Lab, Dept.of Microelectronics, Fudan University 825 Zhangheng Rd., 201203, Shanghai, China

会议类型: 国际会议

会议名称: 2009国际通信电路与系统学术会议(ICCCAS 2009)(2009 International Conference on Communications，Circuits and Systems)

会议地点: 成都

会议语种:英文

页码: 917-920

在线出版日期: 2009-07-23（万方平台首次上网日期，不代表论文的发表时间）