Residual Voltage Properties of ZnO Varistors Doped with Y2O3 for High Voltage Gradient

摘要：

Rare-earth oxides can remarkably enhance the voltage gradient of ZnO varistors as growth inhibitor of ZnO grains. However, the effect of rare-earth oxides on the residual voltage properties of ZnO varistors has not been completely investigated. In this paper, ZnO varistor samples with various contents of Y2O3 dopant were prepared and tested under different currents of 8/20μs impulse surge. When the doped Y2O3 content is no more than 0.75mol％, the residual voltage ratio of ZnO varistor sample decreases with the increment of Y2O3 content. When the doped Y2O3 content reaches 1mol％ or above, the residual voltage ratio of ZnO varistor sample increases remarkably. Such observed experimental results were explained based on the current localization phenomena inner ZnO varistors microstructure.

关键词： ZnO varistor high voltage gradient residual voltage

作者: Jun HU Jun LIU Jinliang HE Wangchen LONG Fengchao LUO

作者单位: Department of Electrical Engineering, Tsinghua University, Beijing, 100084, CHINA

会议类型: 国际会议

会议名称: 第九届电介质材料性能与应用国际会议(The 9th International Conference on Properties and Applications of Dielectric Materials)

会议地点: 哈尔滨

会议语种:英文

页码: 1154-1157

在线出版日期: 2009-07-19（万方平台首次上网日期，不代表论文的发表时间）