Dielectric Phenomenon of ITO/Alq3/Al Structure OLED
Dielectric properties of OLED were investigated using the structure of ITO/Alq3/Al device. In spite of various advantages in OLED, a fundamental study on physical properties is not yet sufficient. We have investigated impedance, electrical conductivity, and the dielectric loss depending on a bias-voltage variation using ITO/Alq3/Al device. The device shows a frequency-dependent response such that a major contribution is resistive below time constant and capacitive above time constant. Also, the device shows a voltage-dependent electrical conductivity in lowfrequency region. A bulk resistance rapidly decreases as the frequency increases above 1MHz. The dielectric loss shows that there appears an interfacial polarization in low-frequency region, and an orientational polarization in high-frequency region.
polarization Alq3 interfacial orientational
Young-Il Choi Hyung-Gon Kim Yong-Cheul Oh Choon-Nam Cho Cheol-Gi Shin Jin-Sa Kim
Dept.of Mechatronics Engineering, Chosun College University of Science & Technology, Gwangju, 501-74 Dept.of Electrical Engineering, Chosun College University of Science & Technology, Gwangju, 501-744, Dept.of R&D and Production Business, Juam Electric & Communication Co., Ltd, Seoul, 139-848, Korea Dept.of Electrical Engineering, Kwangwoon University, Wolgye-Dong, Nowon-Ku, Seoul, 139-701, Korea Dept.of Digital & Information Electronics Engineering, Bucheon College, Gyeonggi-do, 420-735, Korea
国际会议
哈尔滨
英文
1173-1176
2009-07-19（万方平台首次上网日期，不代表论文的发表时间）