Impact of repetitive avalanche mode on Power MOSFETs performances

摘要：

Using a power MOSFET in avalanche mode induces very high stresses in the device that may impact its electrical characteristics. Here, a low voltage power MOSFET is submitted to repetitive unclamped inductive switching (UIS) under very high current at high temperature. Electrical characteristics such as BVDSS, IGSS, IDSS, and RDSon are followed during cycling. After several million cycles measurements show that RDSon decreases with the number of UIS cycles whereas other parameters stay constant.

作者: B.Bernoux R.Escoffier P.Jalbaud J-M.Reynès A.Deram J-M.Dorkel E.Scheid

作者单位: CNRS , LAAS , 7 avenue du colonel Roche, F-31077 Toulouse, France Université de Toulouse , UPS, INSA Freescale Semiconducteurs France SAS Av du Général Eisenhower, B.P.1029, 31023 ToulouseCedex, France CNRS , LAAS , 7 avenue du colonel Roche, F-31077 Toulouse, France Université de Toulouse , UPS, INSA

会议类型: 国际会议

会议名称: The Eighth International PCIM China(第八届电子功率器件、智能传送、电源质量国际研讨会)

会议地点: 上海

会议语种:英文

页码: 133-136

在线出版日期: 2009-06-02（万方平台首次上网日期，不代表论文的发表时间）