GaN Technology Signals A New Era in Power Conversion
While silicon MOSFETs have dominated the power conversion landscape for almost 30 years, the next generation AC-DC and DC-DC power converters for emerging high performance applications are demanding dramatic improvements in device figures of merit (FOMs) beyond projected silicon performance limits. As silicon transistors approach maturity and cost of developments become prohibitive, newer materials and transistor structures are needed to address these new performance challenges. Advances in GaN-on-silicon epitaxial process and device fabrication technology promises to fill this gap and initiate a new trend in power conversion technologies. GaN-on-Si based high electron mobility transistors (HEMTs) fabricated with this new CMOS compatible process promise to deliver a FOM performance that is at least an order of magnitude better than existing silicon MOSFETs. Besides discussing the benefits of the new GaN-on-Si epitaxial technology platform, this paper will also show how DC-DC converters built using the new GaN technology platform will enable a new era in high frequency, high density, highly efficient power conversion solutions.
Wei Wu
Senior Field Application Engineer, International Rectifier
国际会议
The Eighth International PCIM China(第八届电子功率器件、智能传送、电源质量国际研讨会)
上海
英文
148-149
2009-06-02（万方平台首次上网日期，不代表论文的发表时间）