A Low Loss, Low Noise and Robust 500 to 900V Class Power MOSFET with Multiple RESURF Guard-ring Edge Structure
Purpose of this study is to provide a new power MOSFET exhibiting excellent performance with low loss, low noise and high robustness. By introducing the multiple RESURF guard-ring structure and reduced epitaxial layer thickness, the MOSFET achieves 18％ lower on-resistance compared with the conventional power MOSFET, which is the best performance among commercially available power MOSFETs in this voltage class. Switching noise is drastically improved with optimized Cgd and Cds by changing width and spacing of the p-well. Overall performance of switching mode power supply (SMPS) systems is improved by using the new power MOSFET.
Y.Niimura M.Inoue T.Kobayashi Y.Hara T.Yamada N.Fujishima
Fuji Electric Device Technology Co., Ltd.4-18-1Tsukama, Matsumoto, Nagano, 390-0821Japan
国际会议
The Eighth International PCIM China(第八届电子功率器件、智能传送、电源质量国际研讨会)
上海
英文
150-155
2009-06-02（万方平台首次上网日期，不代表论文的发表时间）