Eoff characterization of SiC diodes for use in resonant converters
The predominant feature in high frequency switching is the turn off energy (eoff). There is not information about eoff in data sheets and we try to obtain information of eoff dependence. We have characterized three types of SiC diodes and one diode developed in the National Microelectronics Center of Barcelona. The first characterization determines switching losses according to switching current for two different temperatures (25 ℃ and 125 ℃). Switching parameters are: constant voltage and MOSFET gate resistance constant. The second characterization determines switching losses of SiC according to current switching speed (di/dt). The parameters of the switch are constant voltage, constant current switching. This study of switching losses has been made at two temperatures (25℃ 125 ℃).
SiC eoff Induction Heating
J.Jordán Eva Gumbau J.M.Magraner C.Cases V.Esteve E.Dede E.Sanchis E.Maset A.Ferreres JB Ejea
Departament dEnginyeria Electronica.Universitat de Valencia.C/ Dr.Moliner 50, 46100-Burjassot (Vale GH Electrotermia C/Vereda Real s/n San A.de Benageber (Valencia) Espana
国际会议
The Eighth International PCIM China(第八届电子功率器件、智能传送、电源质量国际研讨会)
上海
英文
156-161
2009-06-02（万方平台首次上网日期，不代表论文的发表时间）