Integration of a 1200V-SOI driver into a medium power IGBT module package

摘要：

Intelligent Power modules (IPM′s) are a fully integrated module combining the driver circuit and the power stage in one common enclosure. This is quite common in the 600V IGBT range up to 25A. A new approach for medium power IPM′s is presented based on an established 1200V, 50A IGBT/FWD-Inverter- module, the Semikron’s Mini-SKiiP technology, with the integration of advanced silicon on insulator (SOI) gate driver HVIC for 1200V in a reliable and cost effective package with excellent thermal conductivity. Measurement results demonstrate the driver performance as the difference between a standard CIB module and an IPM version. The new module approach for industrial standard drive applications supports the market trend towards integrated power module solutions already known from the consumer market.

作者: Thomas Grasshoff Reinhard Herzer Matthias Rossberg Bastian Vogler

作者单位: SEMIKRON International GmbHSigmundstrasse 20090431 Nuremberg, Germany

会议类型: 国际会议

会议名称: The Eighth International PCIM China(第八届电子功率器件、智能传送、电源质量国际研讨会)

会议地点: 上海

会议语种:英文

页码: 243-247

在线出版日期: 2009-06-02（万方平台首次上网日期，不代表论文的发表时间）