Gate-to-Cathode capacitor impact on Triac immunity and reliability

摘要：

Designers are used to adding a capacitor between the control terminal and the drive reference terminal to increase immunity of power semiconductor devices to fast transient voltages. Even if this solution is good for most devices, such a design trick has to be avoided with Triacs. Indeed a gate-to-cathode capacitor significantly decreases the Triac robustness to dI/dt and overvoltages.

作者: Jean-Michel SIMONNET Laurent GONTHIER

作者单位: STMicroelectronics-IMS / APMRue Pierre et Marie Curie-BP7155F-37071 Tours Cedex 2France STMicroelectronics-IMS / APM Rue Pierre et Marie Curie-BP7155 F-37071 Tours Cedex 2 France

会议类型: 国际会议

会议名称: The Eighth International PCIM China(第八届电子功率器件、智能传送、电源质量国际研讨会)

会议地点: 上海

会议语种:英文

页码: 253-258

在线出版日期: 2009-06-02（万方平台首次上网日期，不代表论文的发表时间）