Stress analysis and lifetime estimation on Power MOSFETs for automotive ABS systems
In this paper a methodology to experimentally evaluate the stress exerted on Power MOSFET devices is introduced. The proposed technique is based on an accurate experimental analysis of electro-thermal transients, exploiting a test bench tailored around an infrared microscope, enabling dynamic temperature mapping with a 17 m spatial resolution in both directions and an over 250 kHz bandwidth. A suitable reliability model has been also carried out, able to exploit the results obtained using the proposed technique, based on the principle of the linear accumulation of the damage due to the thermo mechanical fatigue. A practical application of the proposed technique and of the reliability model is fully described along the paper, dealing with the estimation of expected lifetimes of trench and planar power MOSFET structures designed to equip automotive ABS systems. The paper therefore goes trough all the steps required to predict the life time of power MOSFETs, demonstrating that the proposed methodology is a quite useful zero failure design tool, enabling to identify the best technology on the basis of the specified mission profile.
A.Testa S.De Caro S.Panarello S.Patanè D.Patti R.Letor S.Russo S.Poma
D.F.M.T.F.M.-University of Messina-ITALY STMicroelectronics-CATANIA-ITALY
国际会议
The Eighth International PCIM China(第八届电子功率器件、智能传送、电源质量国际研讨会)
上海
英文
263-266
2009-06-02（万方平台首次上网日期，不代表论文的发表时间）