Deformation in Mono-crystalline Silicon Caused by High Speed Single-Point Micro-cutting

摘要：

This paper investigates the deformation in monocrystalline silicon subjected to singlepoint cutting with the cutting speed up to 46.78 m/s, the depth of cut of 2 μm, and the feed rate of 5 and 30 μm/rev. Raman spectroscopy and transmission electron microscopy were used to characterize the subsurface damages. It was found that the increase of either the feed rate or cutting speed increases the thickness of amorphous layer and penetration depth of dislocations. At the feed rate of 30 μm/rev and cutting speed of 12.48 m/s, a new dislocation system was initiated. An unknown peak was detected by Raman spectroscopy, which may indicate an unknown Si phase.

关键词： Silicon single-point nano-cutting high speed deformation phase transformation dislocation.

作者: A.Q.Biddut J.Yan L.C.Zhang T.Ohta T.Kuriyagawa B.Shaun

作者单位: School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney,Australia Department of Nanomechanics, Graduate School of Engineering, Tohoku University, Japan Mitsubishi Electric Corporations, Japan The Electron Microscope Unit, The University of Sydney, NSW 2006, Australia

会议类型: 国际会议

会议名称: 第九届加工技术进展国际会议(9th International Conference on Progress of Machining Technology)

会议地点: 昆明

会议语种:英文

页码: 347-350

在线出版日期: 2009-04-25（万方平台首次上网日期，不代表论文的发表时间）