Improvement of Thickness Uniformity of Bulk Silicon Wafer by Numerically Controlled Local Wet Etching

摘要：

We have developed numerically controlled local wet etching (NC-LWE) as a novel deterministic subaperture figuring and finishing technique, which is suitable for fabricating various optical components and finishing functional materials. In this technique, a chemical reaction between the etchant and the surface of the workpiece removes the surface without causing the degradation of the physical properties of the workpiece material. Furthermore, the processing properties of NC-LWE are insensitive to external disturbances, such as the vibration or thermal deformation of the machine or the workpiece, because of its noncontact removal mechanism. By applying the NC-LWE process using HF/HNO3 mixtures to etch the silicon, we corrected the thickness distribution of the bulk silicon wafer with a diameter of 200 mm and achieved the total thickness variation of less than 0.23 μm within the diameter of 190 mm.

关键词： SOI Silicon wafer Local wet etching Etching Figuring Ultraprecision machining

作者: Kazuya Yamamura Takuro Mitani Kazuaki Ueda Mikinori Nagano Nobuyuki Zettsu

作者单位: Research Center for Ultra-precision Science and Technology, Osaka University, Yamadaoka 2-1, Suita, Research Center for Ultra-precision Science and Technology, Osaka University,Yamadaoka 2-1, Suita, O

会议类型: 国际会议

会议名称: 第九届加工技术进展国际会议(9th International Conference on Progress of Machining Technology)

会议地点: 昆明

会议语种:英文

页码: 372-375

在线出版日期: 2009-04-25（万方平台首次上网日期，不代表论文的发表时间）