EPITAXIAL GROWTH OF NON-POLAR A-PLANE ZNO ON R-PLANE SAPPHIRE SUBSTRATES BY MOCVD AND RF-SPUTTERING

摘要：

Epitaxial growth of non-polar (1120) ZnO thin films (a-plane ZnO) on (1102) sapphire (r-plane sapphire) were successfully implemented through metal organic chemical vapor deposition (MOCVD) and radio-frequency sputtering, respectively. For ZnO film deposited by sputtering, the growth temperature and the flow ratios of argon to oxygen were shown to significantly influence the crystalline quality and surface morphology of ZnO films. Rat surface ZnO epitaxial film can be grown by MOCVD. The epitaxial relationship between ZnO and sapphire substrate is

关键词： ZnO epitazial growth XRD AFM TEM

作者: HOU-GUANG CHEN GUO-JU CHEN SHENG-RUI JIAN GOU-ZHI HUANG JHIH-WEI NI

作者单位: Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan, Republic of China

会议类型: 国际会议

会议名称: 第五届先进材料与加工国际会议(Fifth International Conference on Advanced Materials and Processing ICAMP-5)

会议地点: 哈尔滨

会议语种:英文

页码: 1154-1159

在线出版日期: 2008-09-03（万方平台首次上网日期，不代表论文的发表时间）