MICROSTRUCTURE AND MECHANICAL PROPERTIES OF ZNO FILMS ON SILICON SUBSTRATE WITH ITO BUFFER LAYER
ZnO thin films were prepared by an unbalanced magnetron sputter on silicon substrates and glass slides. An ITO layer was applied on Si substrate as a buffer layer. Microstructure and mechanical deformation behaviors of the ZnO films were investigated by XRD, SEM and nanoindentation methods. Results showed that ITO buffer layer plays an important role for ZnO heteroepitaxy growth on Si substrates. The strains at the interface induced by the lattice mismatch of Si and ZnO are repressed. As a result, ZnO films with the buffer layers showed larger grain size and better crystallinity. The hardness and modulus of ZnO films with buffer layer decreased. Continuous stiffness measurement (CSM) technique was also used to investigate the effects of buffer layer and substrate materials on the mechanical performance of the prepared ZnO films. The relationship between microstructure and mechanical properties of ZnO films are discussed based on the experimental results.
Zinc Ozide buffer layer nanoindentation microstructure
C-W.ZOU W.GAO
Department of Chemical and Material Engineering, the University of Auckland, New Zealand
国际会议
第五届先进材料与加工国际会议(Fifth International Conference on Advanced Materials and Processing ICAMP-5)
哈尔滨
英文
1764-1770
2008-09-03（万方平台首次上网日期，不代表论文的发表时间）