The 6th generation 1200V Trench FS-IGBT modules
The 6th-generation IGBT module technologies are presented in this paper. The new modules have designed based on the keywords of low noise radiation, high performance and compact. The combination of the low thermal impedance packaging technologies and newly developed the 6th generation V-IGBT silicon have realized technological breakthrough. As a result, the EP3 size 122mm×62mm module power ratings have been extended up to 1200V-150A for PIM and 1200V-600A for 17mm-height new 2in1 modules.
H.Nakano M.Otsuki O.Ikawa H.Kakiki T.Miyasaka
Fuji Electric Device Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821 Japan
国际会议
The Seventh International PCIM China(第七届电子功率器件、智能传送、电源质量国际研讨会)
上海
英文
6-11
2008-03-18（万方平台首次上网日期，不代表论文的发表时间）