Improved cycling capability for modern IGBT Power Modules
Modern IGBT modules are equipped with state of the art IGBT chips operating at increased junction temperatures of Tvj,op = 150℃ (Tvj,max = 175℃). Without improvement of the module packaging and assembly technology a decrease of the cycling capability of approximately 50％ would be expected. With improved technology and processes, however, even higher cycling capabilities are achieved. This paper discusses the conditions for Power Cycling tests, compares different test conditions, presents typical failure mechanisms and provides Power Cycling diagrams for IGBT modules equipped with the latest IGBT chip generations.
Andreas Volke Michael Hornkamp
Infineon Technologies China Co., Ltd, No.7&8, Lane 647, Songtao Road, Zhangjiang Hi-Tech Park, Pudon Infineon Technologies AG Warstein-Belecke, Max-Planck-Strasse 5, 59481 Warstein, Germany
国际会议
The Seventh International PCIM China(第七届电子功率器件、智能传送、电源质量国际研讨会)
上海
英文
21-25
2008-03-18（万方平台首次上网日期，不代表论文的发表时间）