Large Diameter 200 mm FZ Silicon Wafers for IGBT Applications

摘要：

This paper will discuss the recent progress in FZ silicon technology and the characterization of large diameter 200 mm FZ silicon wafers for IGBT applications. Siltronic is currently the first and only silicon producer with full-scale production of large diameter 200 mm FZ wafers. Characteristics of such important parameters like available resistivity ranges, doping striations, lifetime of minority carriers, and others will be presented.

作者: Kurt Niederer Witold Jeske Frank M(u)mmler Rupert Krautbauer

作者单位: Siltronic AG Hanns-Seidel-Platz 4 81737 M(u)nchen, Germany Siltronic Corporation 7200 NW Front Avenue Portland, OR 97210-3676, USA

会议类型: 国际会议

会议名称: The Seventh International PCIM China(第七届电子功率器件、智能传送、电源质量国际研讨会)

会议地点: 上海

会议语种:英文

页码: 26-29

在线出版日期: 2008-03-18（万方平台首次上网日期，不代表论文的发表时间）