New 900 V Voltage Class for Super Junction Devices-A New Horizon for SMPS

摘要：

With the new CoolMOS(R)900 V C3 technology a new benchmark is set for high voltage power MOSFETs towards highest blocking voltages. The transistor combines lowest RDS(on) with low gate charge Qg to an excellent FOM (figure-of-merit: Qg×RDS(on)) by utilizing advanced charge balance mechanisms. The benefit of this new generation of super junction (SJ) devices is especially shown for three-phase power factor correction (PFC) topologies.

作者: H.Kapels M.Schmitt U.Kirchner G.Aloise F.Bjoerk

作者单位: Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany Infineon Technologies Austria AG, Siemensstrasse 2, A-9500 Villach, Austria

会议类型: 国际会议

会议名称: The Seventh International PCIM China(第七届电子功率器件、智能传送、电源质量国际研讨会)

会议地点: 上海

会议语种:英文

页码: 73-76

在线出版日期: 2008-03-18（万方平台首次上网日期，不代表论文的发表时间）