Microstructures and Electrical Properties of Random-oriented (Bi,La)4Ti3O12 Thin Film Deposited by Pulsed-DC Sputtering Method
Ferroelectric properties of Lead-free (Bi,La)4Ti3O12 (BLT) films were evaluated on the newly developed MTP (Merged Top-electrode and Plate-line) cell structure. The BLT film was deposited by pulsed-DC sputtering method on a buried Pt/IrOx/Ir bottom electrode stack with W-plug. The BLT composition in the sintered sputtering target was Bi48La10Ti30O12. However, the deposited film composition was about Bi40La10Ti30O12 after the heat treatment of crystallization at 700℃/O2/30sec. And grains of the BLT film were randomly oriented and uniformly small ellipsoidal shape (long direction: ～100nm, short direction: ～20nm). The remnant polarization (2Pr) and the leakage current density measured in the 100nm-thick BLT film were about 21 μC/cm2 and 3×10-5 A/cm2 at 3 V, respectively. The fatigue loss was about 10% of the initial polarization value after 1×1011 fatigue cycles.
BLT thin film Ferroelectric properties Pulsed-DC sputtering method Random oriented grains MTP cell structure
M.W.Lee S.L.Ryu S.J.Yeom S.Y.Kweon
Department of Materials Science & Engineering / ReSEM, Chungju National University, 123 Geomdan-ri, Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Ic Department of Materials Science & Engineering / ReSEM, Chungju National University, 123 Geomdan-ri,
国际会议
10th International Symposium on Eco-Materials Processing and Design(第10届国际生态材料加工与设计研讨会)
西安
英文
109-112
2009-01-13（万方平台首次上网日期，不代表论文的发表时间）