Buried-layer bared AZO/TiO2 Semiconductor Coupled Films and Their Photocatalytic Properties
AZO/TiO2 double-layered semiconductor coupled films were prepared through sequentially depositing AZO and TiO2 films on glass substrates by radio frequency (RF) magnetron sputtering. PVP-pretreatment and post-annealing were performed on these double-layers to achieve an exposure of the AZO buried-layer in different baring conditions. The photocatalytic efficiencies of these buried-layer bared structures were measured through dye decomposition under ultraviolet irradiation. Silver mirror reactions were operated to explore a possible photocatalytic mechanism associated with these buried-layer bared conditions. The buried-layer bared AZO/TiO2 coupled films present 2 -3 times of photocatalytic activity comparing to the normal AZO/TiO2 double-layered or single layered ones. It suggested that the self-built electrical field formed from coupling semiconductors reduces the recombination of electron-hole pairs, increases the yield of surface photogenerated charges, and enhances the photocatalysis.
photocatalytic efficiency semiconductor coupled films buried-layer bareness magnetron sputtering
Zhang Xiwen Liu Cencen Han Gaorong
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering
国际会议
10th International Symposium on Eco-Materials Processing and Design(第10届国际生态材料加工与设计研讨会)
西安
英文
707-710
2009-01-13（万方平台首次上网日期，不代表论文的发表时间）