The Effect of the Intrinsic Layer on Reliability of Nitride-based p-i-n Photodetectors

摘要：

By means of 0.25 μm, 0.4 μm and 0.5 μm-thick i-GaN layers, we have successfully proved the reliability of nitride-based p-i-n photodetectors (PDs) was highly sensitive to the thickness of intrinsic GaN layers. After current aging, the p-i-n PDs with thin i-layer exhibited a poor electrical strength.

作者: Y.Z.Chiou Y.G.Lin T.K.Ko

作者单位: Department of Electronics Engineering, Southern Taiwan University, Tainan, TAIWAN Epistar Corp., Tainan, TAIWAN

会议类型: 国际会议

会议名称: 2008亚洲光纤通讯与光电博览会暨国际会议(Asia Optical Fiber Communication & Optoelectronic Ezposition & Conference)

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2008-10-30（万方平台首次上网日期，不代表论文的发表时间）