Optical Gain Chips with Integrated Phase Sections for full C-band Ezternal Cavity Tunable Lasers

摘要：

An optical-gain-chip is demonstrated with an integrated phase modulator for tunable externalcavity-lasers. Optical power greater than 40 mW at chip temperatures of 45℃ is achieved over the C-band. Phase change greater than 2π is demonstrated at a current of less than 15 mA.

作者: S.S.Saini P.J.S.Heim

作者单位: Department of Electrical and Computer Engineering, University of Waterloo200 University Avenue West, Covega,Inc., 10335 Guilford Rd., Jessup, MD 20794

会议类型: 国际会议

会议名称: 2008亚洲光纤通讯与光电博览会暨国际会议(Asia Optical Fiber Communication & Optoelectronic Ezposition & Conference)

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2008-10-30（万方平台首次上网日期，不代表论文的发表时间）