Emissivity Compensated Radiation Thermometry of Silicon Wafers during the Growth of Ozide Films
The emissivity behavior of a silicon wafer under various conditions was simulated using a modeling of the spectral, directional and polarization characteristics of thermal radiation. The excellent relationship between the ratio of p-polarized radiance to s-polarized one and polarized emissivities was confirmed experimentally using a hybrid-type surface temperature sensor at temperature above 900 K. On the basis of these results, the present study proposes a new radiation thermometry technique that can measure both the temperature and spectral polarized emissivity of a silicon wafer at a wavelength of 0.9 μm and at moderately high temperature, irrespective of the variation in emissivity with oxide film thickness.
Metrology Radiation thermometry Emissivity Silicon wafer Hybrid-type surface temperature sensor Polarization
Tohru Iuchi Atsushi Gogami
Sensor Photonics Research Center, Toyo University, Kawagoe 350-8585, Japan School of Engineering, Toyo University, Kawagoe 350-8585, Japan
国际会议
2008年国际温度与热物性测量会议(TEMP BEIJING 2008)
北京
英文
134-139
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）