Future Memory Technologies

摘要：

The presentation will discuss the future memory technologies beyond the 30 nm node,especially for DRAM,NAND Flash,new memories such as Phase change RAM (PRAM),and ferroelectric RAM (FRAM),and novel device structure technologies,which include how far we can extend so far successful conventional semiconductor memories. First of all,business demands and new applications of memories will be summarized. Then the key technical challenges of conventional semiconductor memories to overcome the scaling limitation,possible solutions and directions will be discussed in detail.

作者: Won-Seong Lee

作者单位: Memory R&D center,Semiconductor Business Div.,Samsung Electronics Co.,Ltd San #24,Nongseo-Ri,Giheung-Eup,Yongin-City,Gyunggi-Do 449-900 Korea

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1-4

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）