Green Transistor as a Solution to the IC Power Crisis

摘要：

IC power consumption is not only a package thermal issue but also a significant and fast growing part of the world electricity consumption. A new low voltage transistor could contribute greatly to the need for a new Vdd scaling scenario. Green transistor (gFET) is based on tunneling and provides Ion and Ioff far superior to MOSFET at 0.2V if suitable low-Eg material is introduced into IC manufacturing.

作者: Chenming Hu

作者单位: Dept of Electrical Engineering and Computer Sciences University of California,Berkeley

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 17-20

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）