Silicon Nanowire CMOSFETs:Fabrication, Characteristics, and Memory Application

摘要：

Continuous device scaling has led to the development of various transistors such as Ultra-Thin-Body SOI MOSFET, FinFET, and gate all around (GAA) MOSFETs 1-5.As the device shrinks further, the ultimate MOSFET structure would be GAA nanowire MOSFET with a fully depleted channel thoroughly controlled by the gate electrode. In this paper, fabrication processes of silicon nanowire MOSFETs on bulk Si using top-down method, their characteristics including 1D and quantum dot characteristics will be reported.Also applicable examples to memory devices such as SRAM and NAND Flash will be demonstrated.

作者: Donggun Park

作者单位: Memory Division, Semiconductor Business, Samsung Electronics Co Banweol-Dong, Hwasung-City, Gyeonggi-Do, KOREA, 445-701

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 25-28

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）