Status and trends in Nanoscale Si-based devices and materials

摘要：

An overview of the science and technological aspects of Si-based nanodevices relevant to n+4 technology node and beyond is presented in this paper.Nanoscale CMOS and beyond-CMOS devices, based on innovative concepts, technologies and device architectures, are addressed.

作者: F.Balestra

作者单位: Sinano Institute, IMEP-Minatec (CNRS-Grenoble INP, UJF), 3 Parvis Louis Neel, BP 257, 38016 Grenoble cedex 1,France

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 33-36

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）