An Ezperimental Study on Carrier Transport in Silicon Nanowire Transistors: How Close to the Ballistic Limit?
In this paper, experimental studies on the carrier transport in silicon nanowire transistors (SNWTs) are reported, demonstrating their great potential as an alternative device structure for near-ballistic transport from top-down approach.Both ballistic efficiency and apparent mobility were characterized.A modified experimental extraction methodology for SNWTs is proposed, which takes into account the impact of quantum contact resistance. The highest ballistic efficiency is observed in sub-40nm n-channel SNWTs due to their quasi-1D carrier transport. The apparent mobility is also extracted in comparison with the ballistic limit, which indicates that the gate-all-around SNWT can really be considered as a promising device architecture in close proximity to the ballistic transport.
Runsheng Wang Jing Zhuge Ru Huang Liangliang Zhang Dong-Won Kim Xing Zhang Donggun Park Yangyuan Wang
Institute of Microelectronics, Peking University, Beijing 100871, China Device Research Team, Samsung Electronics Co., Kyungki-Do 449-711, Korea
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
46-49
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）