Investigation of Mobility in Twin Silicon Nanowire MOSFETs(TSNWFETs)

摘要：

The transport characteristics of cylindrical gate-all-around twin silicon nanowire field-effect transistors with radius of 5 nm have been investigated.Mobility was estimated by extracting of source/drain resistance.

作者: Junsoo Kim Seungwon Yang Jaehong Lee Sung Dae Suk Kangil Seo Donggun Park Byung-Gook Park JongDuk Lee Hyungcheol Shin

作者单位: Nano Systems Institute (NSI), Inter-University Semiconductor Research Center (ISRC), and School of E Advanced Technology Development Teaml, R&D Center, Samsung Electronics Co., San 24, Kiheung-Gu, Yong

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 50-52

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）