Thermal Stability of a High Performance PTGVMOS with Native-tie

摘要：

We demonstrate thermal stability of PTGVMOS (Pseudo Tri-Gate Vertical MOSFET) with native-tie on bulk Si wafer.For comparison three types of structure are designed.According to 2D simulation, our proposed structure show excellent thermal stability, such as the lattice temperature in the drain-on-top configuration and drain-on-bottom configuration were improved 50% and 66.6% respectively. The fabricated devices have excellent on/off current ratio (61900,000 times at gate length 40nm) in the drain-on-bottom configuration. In addition, the devices overcome short-channel effects and self heating effects significantly.

作者: Ying-Chieh Tsai Jyi-Tsong Lin Yi-Chuen Eng Shiang-Shi Kang Yi-Ming Tseng Hung-Jen Tseng Po-Hsieh Lin

作者单位: Dept of Electrical Engineering, National Sun Yat-Sen University 70 Lien-Hai Rd.Kaohsiung 80424, Taiwan China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 64-67

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）