Investigations on the Performance Limits of the IMOS Transistor

摘要：

The Impact Ionization MOS (IMOS) transistor is a kind of promising concept as a candidate of MOS transistor due to its abrupt switching.However, some key issues will limit IMOS transistors for practical applications. In this paper, detailed physical explanations for the non-saturation of IMOS output characteristics and the unanticipated low drive current are presented.A new method to enhance the drive current of IMOS devices is reported and briefly discussed as well.

作者: Zhenhua Wang Ru Huang

作者单位: Institute of Microelectronics, Peking University, Beijing 100871, P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 72-75

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）