The impact of substrate bias on RTS and flicker noise in MOSFETs operating under switched gate bias

摘要：

The impact of substrate bias on random telegraph signal (RTS) and flicker noise in MOSFETs operating under switched gate bias is investigated by accurate experiments.Our results show that by applying a forward substrate bias to a MOSFET periodically switched between the nominal bias point and the OFF-state, the flicker noise is significantly suppressed. In particular, forward back bias is effective if applied during the OFF-state.Additional analysis of the RTS noise due to individual traps in small-area devices, clarify that the application of forward substrate bias to switched MOSFETs causes a large reduction of the mean emission time and increases the mean capture time, leading to a suppression of the low-frequency noise associated to the trapping de-trapping processes.

作者: Nicola Zanolla Domagoj Siprak Marc Tiebout Peter Baumgartner Enrico Sangiorgi Claudio Fiegna

作者单位: ARCES -DEIS, University of Bologna & IU.NET, Via Venezia 52, 47023 Cesena,Italy Infineon Technologie Infineon Technologies AG, Am Campeon 1-12, D-85779 Neubiberg, Germany Infineon Technologies Austria AG, Siemens Str.2, A-9500 Villach, Austria ARCES -DEIS, University of Bologna & IU.NET, Via Venezia 52, 47023 Cesena, Italy

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 80-83

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）