Noise in Nano-scale MOSFETs and Flash Cells

摘要：

In this paper, we present a compact channel thermal noise model for short-channel MOSFETs which takes into account various short channel effects. Then, we compared measured data with shot-like noise level and thermal noise model in sub-40 nm CMOS devices.Also we characterized four level RTN (Random Telegraph Noise) and extracted the characteristics of two independent traps in MOSFETs and flash cells. Their vertical, lateral locations in the oxide as well as the trap energy (ET) were obtained by using accurate equations.

作者: Hyungcheol Shin Daewoong Kang Seungwon Yang,Jongwook Jeon,Daewoong Kang Jongwook Jeon

作者单位: Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 88-91

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）