32nm Node Si and Si1-z Gez SOI Coplanar N Channel Vertical Dual Carrier Field Effect Transistor for Small Signal Mized Signal and Communication Applications

摘要：

32 nm Si and Si1-xGex SOI Coplanar N Channel Vertical Dual Carrier Field Effect Transistors for mixed signal and communication applications are presented.

作者: P.Xu R.Yang D.H.Huang C.Huang J.Xu Y.H.Yang Y.Z.Xu Y.F.Zhao D.Bai S.K.Shen S.Xiao G.H.Li

作者单位: Tsing Hua University, Beijing, China Beijing Normal University,Beijing,China Florence Science and Technology, USA China Aerospace orporation, eijing, China China Aerospace Corporation, Beijing, China Beijing Microelectronics Institute, Beijing, China China Academy of Science, Beijing, China Hua Run, Shanghai, China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 96-99

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）