Scaling of Strain-induced Mobility Enhancements in Advanced CMOS Technology

摘要：

Mobility enhancement by strain is a critical element in todays CMOS technology, and enables continued performance scaling.By modulating fundamental material properties, various strained Si techniques boost device and circuit performance independent of geometric and power supply scaling.Challenges for strained Si in aggressively scaled technology demand new ideas and materials.

作者: Kern (Ken) Rim

作者单位: Semiconductor R&D Center, IBM Systems and Technology Group, Hopewell Junction, NY, USA

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 105-108

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）